JPH0551174B2 - - Google Patents

Info

Publication number
JPH0551174B2
JPH0551174B2 JP60131594A JP13159485A JPH0551174B2 JP H0551174 B2 JPH0551174 B2 JP H0551174B2 JP 60131594 A JP60131594 A JP 60131594A JP 13159485 A JP13159485 A JP 13159485A JP H0551174 B2 JPH0551174 B2 JP H0551174B2
Authority
JP
Japan
Prior art keywords
etching
ion
angle
etching rate
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60131594A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61289635A (ja
Inventor
Takatomo Enoki
Kimyoshi Yamazaki
Kuniki Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13159485A priority Critical patent/JPS61289635A/ja
Publication of JPS61289635A publication Critical patent/JPS61289635A/ja
Publication of JPH0551174B2 publication Critical patent/JPH0551174B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP13159485A 1985-06-17 1985-06-17 表面平坦化方法 Granted JPS61289635A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13159485A JPS61289635A (ja) 1985-06-17 1985-06-17 表面平坦化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13159485A JPS61289635A (ja) 1985-06-17 1985-06-17 表面平坦化方法

Publications (2)

Publication Number Publication Date
JPS61289635A JPS61289635A (ja) 1986-12-19
JPH0551174B2 true JPH0551174B2 (en]) 1993-07-30

Family

ID=15061704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13159485A Granted JPS61289635A (ja) 1985-06-17 1985-06-17 表面平坦化方法

Country Status (1)

Country Link
JP (1) JPS61289635A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150064567A1 (en) * 2013-08-29 2015-03-05 Stmicroelectronics (Tours) Sas Silicon microstructuring method and microbattery

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966885A (en) * 1989-08-25 1990-10-30 At&T Bell Laboratories Method of producing a device comprising a metal oxide superconductor layer
US5744400A (en) * 1996-05-06 1998-04-28 Accord Semiconductor Equipment Group Apparatus and method for dry milling of non-planar features on a semiconductor surface
JP4008420B2 (ja) 2004-02-23 2007-11-14 Ｔｄｋ株式会社 磁気記録媒体の製造方法
US8597528B1 (en) 2011-03-30 2013-12-03 Western Digital (Fremont), Llc Method and system for defining a read sensor using an ion mill planarization
US8578594B2 (en) 2011-06-06 2013-11-12 Western Digital (Fremont), Llc Process for fabricating a magnetic pole and shields
US9053735B1 (en) 2014-06-20 2015-06-09 Western Digital (Fremont), Llc Method for fabricating a magnetic writer using a full-film metal planarization
JP7382809B2 (ja) * 2019-12-02 2023-11-17 キヤノントッキ株式会社 成膜方法及び成膜装置
US11823910B2 (en) * 2020-07-31 2023-11-21 Tokyo Electron Limited Systems and methods for improving planarity using selective atomic layer etching (ALE)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432985A (en) * 1977-08-19 1979-03-10 Mitsubishi Electric Corp Flattening method for substrate surface with protrusion
JPS55143035A (en) * 1979-04-24 1980-11-08 Nec Corp Manufacture of pattern
JPS5882536A (ja) * 1981-11-10 1983-05-18 Fujitsu Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150064567A1 (en) * 2013-08-29 2015-03-05 Stmicroelectronics (Tours) Sas Silicon microstructuring method and microbattery
US9780366B2 (en) * 2013-08-29 2017-10-03 Stmicroelectronics (Tours) Sas Silicon microstructuring method and microbattery

Also Published As

Publication number Publication date
JPS61289635A (ja) 1986-12-19

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term